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| MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. http://onsemi.com 65 4 * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7-inch/3,000 Unit Tape and Reel Device Marking: MBT3906DW1T1 = A2 1 2 3 SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) (1) Q1 Q2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Electrostatic Discharge Symbol VCEO VCBO VEBO IC ESD Value -40 -40 -5.0 -200 HBM>16000, MM>2000 Unit Vdc Vdc Vdc mAdc Device V MBT3906DW1T1 SOT-363 3000 Units/Reel Package Shipping (4) (5) MBT3906DW1T1 (6) ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic Total Package Dissipation(1) TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Symbol PD RqJA TJ, Tstg Max 150 833 -55 to +150 Unit mW C/W C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. (c) Semiconductor Components Industries, LLC, 2001 1 October, 2001 - Rev. 0 Publication Order Number: MBT3906DW1T1/D MBT3906DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX -40 -40 -5.0 - - - - - -50 -50 Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (2) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE 60 80 100 60 30 VCE(sat) - - VBE(sat) -0.65 - -0.85 -0.95 -0.25 -0.4 Vdc - - 300 - - Vdc - SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product Output Capacitance Input Capacitance 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. fT Cobo Cibo 250 - - - 4.5 10.0 MHz pF pF ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Input Impedance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Small-Signal Current Gain (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 k , f = 1.0 kHz) Symbol hie hre hfe hoe NF Min 2.0 0.1 100 3.0 - Max 12 10 400 60 4.0 Unit k X 10-4 - mmhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -3.0 Vdc, VBE = 0.5 Vdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) (IB1 = IB2 = -1.0 mAdc) td tr ts tf - - - - 35 35 225 75 ns ns http://onsemi.com 2 MBT3906DW1T1 3V +9.1 V < 1 ns +0.5 V 10 k Cs < 4 pF* 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 275 0 10 k 1N916 Cs < 4 pF* < 1 ns 3V 275 10.6 V * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT VCC = 40 V IC/IB = 10 3.0 2.0 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 3. Capacitance 500 300 200 100 70 50 30 20 10 7 5 500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 1.0 2.0 3.0 Figure 4. Charge Data IC/IB = 10 VCC = 40 V IB1 = IB2 IC/IB = 20 TIME (ns) tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC/IB = 10 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Fall Time http://onsemi.com 3 MBT3906DW1T1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 5.0 4.0 3.0 2.0 1.0 0 0.1 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) IC = 50 mA IC = 100 mA IC = 1.0 mA IC = 0.5 mA NF, NOISE FIGURE (dB) 40 100 Figure 7. Figure 8. h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20 h fe , DC CURRENT GAIN 200 100 70 50 30 10 7 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 9. Current Gain hre , VOLTAGE FEEDBACK RATIO (x 10 -4) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0 Figure 10. Output Admittance 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio http://onsemi.com 4 MBT3906DW1T1 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C +25C -55C VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 13. DC Current Gain VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 0.6 0.4 0.2 0 0.01 IC = 1.0 mA 10 mA 30 mA 100 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V q V , TEMPERATURE COEFFICIENTS (mV/ C) 1.0 0.8 V, VOLTAGE (VOLTS) 0.6 0.4 0.2 0 1.0 0.5 0 -0.5 +25C TO +125C -1.0 -1.5 -2.0 0 20 qVB FOR VBE(sat) 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 -55C TO +25C qVC FOR VCE(sat) +25C TO +125C -55C TO +25C VCE(sat) @ IC/IB = 10 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 Figure 15. "ON" Voltages Figure 16. Temperature Coefficients http://onsemi.com 5 MBT3906DW1T1 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.5 mm (min) interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 1.9 mm SOT-363 SOT-363 POWER DISSIPATION The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows: PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 6 EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE 0.4 mm (min) 0.65 mm 0.65 mm MBT3906DW1T1 PACKAGE DIMENSIONS SOT-363/SC-88 CASE 419B-01 ISSUE G A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 5 4 S 1 2 3 -B- D 6 PL 0.2 (0.008) N M B M DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 STYLE 1: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 J C EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 H K http://onsemi.com 7 MBT3906DW1T1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MBT3906DW1T1/D |
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